SELF - ASSEMBLY OF PHOSPHONATE MONOLAYERS ON GaAs
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منابع مشابه
Variable Index of Refraction Ultrathin Films Formed from Self-Assembled Zirconium Phosphonate Multilayers: Characterization by Surface Plasmon Resonance Measurements and Polarizat ion/Modulat ion FT-IR Spectroscopy
Ultrathin (submicrometer) organic films of specified index of refraction are constructed by the sequential deposition of self-assembled zirconium phosphonate (ZP) molecular monolayers that contain two Merent bisphosphonate ions, 1,lO-decanediylbis(phosphonate) (DBP) and 4,4azobis[(p-phenylene)methylenelbis(phosphonate) (AZO). By varying the ratio of DBP to AZO monolayers in the ZP multilayer fi...
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The attachment chemistry required for the sequential self-assembly of zirconium phosphonate (ZP) monolayers on gold and germanium surfaces is examined with a combination of attenuated total reflection (ATR-FTIR) and polarization modulation (PM-FTIR) Fourier transform infrared spectroscopies. On the germanium substrates, the conversion of an attached o-aminosilane monolayer to phosphate amide sp...
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Alkanethiol self-assembled monolayers SAMs of various methylene group chain lengths HS– CH2 n–CH3 n=9,11,13,15,17 were fabricated on the GaAs 001 surface followed by characterization using Fourier transform infrared spectroscopy. Modal analysis of the CH2 stretching mode region 2800–3000 cm−1 showed that linear scaling of the n-dependent factors accurately reproduced the spectral data, supporti...
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We present a comparative study of the growth of tensile-strained GaP on the four low-index surfaces of GaAs: (001), (110), (111)A, and (111)B. For each surface orientation we outline the growth conditions required for smooth GaAs homoepitaxy. We are able to predict the resulting surface morphology when GaP is deposited onto these four GaAs surfaces by considering the influence of surface orient...
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تاریخ انتشار 2001