SELF - ASSEMBLY OF PHOSPHONATE MONOLAYERS ON GaAs

نویسندگان

  • Christopher Hughes
  • Sharon E. Koh
  • Brian H. Augustine
  • Joy M. Polefrone
  • James Madison
چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Variable Index of Refraction Ultrathin Films Formed from Self-Assembled Zirconium Phosphonate Multilayers: Characterization by Surface Plasmon Resonance Measurements and Polarizat ion/Modulat ion FT-IR Spectroscopy

Ultrathin (submicrometer) organic films of specified index of refraction are constructed by the sequential deposition of self-assembled zirconium phosphonate (ZP) molecular monolayers that contain two Merent bisphosphonate ions, 1,lO-decanediylbis(phosphonate) (DBP) and 4,4azobis[(p-phenylene)methylenelbis(phosphonate) (AZO). By varying the ratio of DBP to AZO monolayers in the ZP multilayer fi...

متن کامل

Vibrational Spectroscopic Studies of the Attachment Chemistry for Zirconium Phosphonate Multilayers at Gold and Germanium Surfaces

The attachment chemistry required for the sequential self-assembly of zirconium phosphonate (ZP) monolayers on gold and germanium surfaces is examined with a combination of attenuated total reflection (ATR-FTIR) and polarization modulation (PM-FTIR) Fourier transform infrared spectroscopies. On the germanium substrates, the conversion of an attached o-aminosilane monolayer to phosphate amide sp...

متن کامل

Observation of surface enhanced IR absorption coefficient in alkanethiol based self-assembled monolayers on GaAs„001..

Alkanethiol self-assembled monolayers SAMs of various methylene group chain lengths HS– CH2 n–CH3 n=9,11,13,15,17 were fabricated on the GaAs 001 surface followed by characterization using Fourier transform infrared spectroscopy. Modal analysis of the CH2 stretching mode region 2800–3000 cm−1 showed that linear scaling of the n-dependent factors accurately reproduced the spectral data, supporti...

متن کامل

Tensile-strained growth on low-index GaAs

We present a comparative study of the growth of tensile-strained GaP on the four low-index surfaces of GaAs: (001), (110), (111)A, and (111)B. For each surface orientation we outline the growth conditions required for smooth GaAs homoepitaxy. We are able to predict the resulting surface morphology when GaP is deposited onto these four GaAs surfaces by considering the influence of surface orient...

متن کامل

Microfabrication through Electrostatic Self-Assembly

We use electrostatic interactions to direct the patterning of gold disks having ∼10-μm diameters on functionalized surfaces. Planar and curved substrates with patterned surface charge were generated either by microcontact printing or by photolithography. Small charged gold disks were generated by electroplating gold into photoresist molds and derivatizing these disks with charged self-assembled...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2001